PART |
Description |
Maker |
UPD27128 |
16384 x 8 Bit NMOS UV/OTP EPROM
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NEC
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M5M4416P M5M4416P-12 M5M4416P-15 |
65536 Bit (16384 Word by 4 Bit) Dynamic Ram 65,536-BIT (16,384-WORD BY 4-BIT) DYNAMIC RAM
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Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
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MN4164-20 MN4164P-20 MN4164-25 MN4164P-15 MN4164P- |
NMOS 65,536 X 1 BIT DYNAMIC RAM
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Panasonic Corporation Panasonic Semiconductor
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UPD41416 UPD41416-12 UPD41416-15 UPD41416-20 |
16,384 X 4-BIT DYNAMIC NMOS RAM
|
NEC
|
UPD41257 UPD41257C-15 UPD41257C-12 UPD41257C-20 UP |
262144 X 1-BIT DYNAMIC NMOS RAM
|
NEC
|
IDT7203L20J IDT7203L20JB IDT7204L20J IDT7204L20JB |
CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 CMOS ASYNCHRONOUS FIFO 2048 x 9 4096 x 9 8192 x 9 and 16384 x 9 RES,SMD,100,1%,0.063W,0603 High-speed double diode - Cd max.: 1.5 pF; Configuration: dual c.c. ; IF max: 215 mA; IFSM max: 4 A; IR max: 500@VR=80V nA; IFRM: 500 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 80 V Schottky barrier diode - Cd max.: 100@VR=4V pF; Configuration: single ; IF: 1 A; IFSM max: 25 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V CMOS ASYNCHRONOUS FIFO 2048 x 9/ 4096 x 9/ 8192 x 9 and 16384 x 9 Trenchmos (tm) logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.34 A; R<sub>DS(on)</sub>: 3900@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 异步FIFO的CMOS 2048 × 9096 × 9192 × 96384 × 9 INSERT, COAX FEMALE STRAIGHTINSERT, COAX FEMALE STRAIGHT; Impedance:50R; Coaxial cable type:RG174AU/RG188AU/RG316AU 16K X 9 OTHER FIFO, 50 ns, CDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 30 ns, CDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 异步FIFO的CMOS 2048 × 9096 × 9192 × 96384 × 9 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 16K X 9 OTHER FIFO, 50 ns, CQCC32 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 16K X 9 OTHER FIFO, 50 ns, PDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 16K X 9 OTHER FIFO, 50 ns, CDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 2K X 9 OTHER FIFO, 20 ns, PQCC32 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 8K X 9 OTHER FIFO, 50 ns, CDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 80 ns, CDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 80 ns, PDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 25 ns, CQCC32 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 8K X 9 OTHER FIFO, 20 ns, CDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 20 ns, CDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 8K X 9 OTHER FIFO, 50 ns, CQCC32 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 2K X 9 OTHER FIFO, 20 ns, CDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 2K X 9 OTHER FIFO, 20 ns, PDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 65 ns, PDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 65 ns, CDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 50 ns, CDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 2K X 9 OTHER FIFO, 50 ns, PQCC32 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 25 ns, PDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 50 ns, PQCC32 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 65 ns, CQCC32 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 2K X 9 OTHER FIFO, 65 ns, CQCC32 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 2K X 9 OTHER FIFO, 65 ns, PDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 2K X 9 OTHER FIFO, 80 ns, PDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 2K X 9 OTHER FIFO, 80 ns, CQCC32 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 2K X 9 OTHER FIFO, 80 ns, CDIP28
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IDT[Integrated Device Technology] Integrated Device Technology, Inc. Air Cost Control INTEGRATED DEVICE TECHNOLOGY INC Integrated Device Techn...
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FM1008-200DC FM1008-200SC FM1008-200PC FMX1308-200 |
1024-16384-bit nonvolatile static RAM family 1024-16384-bit nonvlatile static ram family NVRAM (Ferroelectric Based) NVRAM中(基于铁电
|
Ramtron International Corp. Ramtron International, Corp.
|
TC55417J TC55417P |
(TC55417P/J) 16384 x 4-Bit CMOS Static RAM
|
Toshiba
|
HYB514405BJL HYB514405BJ-60 Q67100-Q2116 |
1M x 4-Bit Dynamic RAM(1M x 4-位动RAM (超级页面EDO模式)) RES 1.3K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA 1M X 4 EDO DRAM, 60 ns, PDSO20 1M x 4-Bit Dynamic RAM 100万4位动态随机存储器
|
SIEMENS AG
|
TC511402AJ-60 TC511402AP-60 TC511402ASJ-60 TC51140 |
1,048,576 x 4 BIT DYNAMIC RAM 1048576 x 4 BIT DYNAMIC RAM Darlington Array IC; Transistor Polarity:NPN; Number of Transistors:7; Collector Emitter Voltage, Vceo:1.3V; Package/Case:16-DIP
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http:// Toshiba Semiconductor Toshiba Corporation
|
HYB5117800BSJ-50- Q67100-Q1092 Q67100-Q1093 HYB311 |
2M x 8 - Bit Dynamic RAM 2k Refresh 2M×8-Bit Dynamic RAM (Fast Page Mode)(2M×8动态RAM(快速页面模)
|
SIEMENS AG SIEMENS A G
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GM71C17400 GM71C17400CJ GM71CS17400CL GM71C17400CL |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM 4,194,304 words x 4 bit CMOS dynamic RAM, 60ns 4M X 4 FAST PAGE DRAM, 50 ns, PDSO24 x4 Fast Page Mode DRAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24 4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M IC REG LDO 1A 12V SHDN TO220FP-5 null4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM 4,194,304 words x 4 bit CMOS dynamic RAM, 50ns 4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
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Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
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